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SIPMOS(R) Small-Signal-Transistor Features * N channel
*
BSP 320S
VDS RDS(on) ID
4
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V A
Enhancement mode
* Avalanche rated * dv/dt rated
3 2 1
VPS05163
Type BSP320S
Package SOT-223
Ordering Code Q67000-S4001
Pin 1 G
Pin 2/4 D
Pin 3 S
Maximum Ratings , at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 mJ A mJ kV/s Unit A
ID IDpulse EAS IAR EAR
dv/dt
T A = 25 C
Avalanche energy, single pulse
I D = 2.9 A, V DD = 25 V, R GS = 25
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 2.9 A, V DS = 20 V, di/dt = 200 A/s, T jmax = 150 C
Gate source voltage Power dissipation
VGS Ptot Tj Tstg
20 1.8 -55 ... +150 -55 ... +150 55/150/56
V W C
T A = 25 C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSP 320S
Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. 17 110 max. 70 K/W K/W Unit
RthJS RthJA
-
Static Characteristics Drain- source breakdown voltage
V(BR)DSS VGS(th) IDSS
60 2.1
3
4
V
VGS = 0 V, I D = 0.25 mA
Gate threshold voltage, VGS = VDS I D = 20 A Zero gate voltage drain current
A 0.1 10 0.09 1 100 100 0.12 nA
VDS = 60 V, V GS = 0 V, T j = 25 C VDS = 60 V, V GS = 0 V, T j = 150 C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, I D = 2.9 A
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSP 320S
Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. 5.8 275 90 50 11 max. 340 120 65 17 ns S pF Unit
g fs Ciss Coss Crss td(on)
2.5 -
VDS2*ID*RDS(on)max , ID = 2.9 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33
Rise time
tr
-
25
40
VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33
Turn-off delay time
td(off)
-
25
40
VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33
Fall time
tf
-
35
55
VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33
Data Sheet
3
05.99
BSP 320S
Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 0.25 7.4 9.7 4.7 max. 0.3 9.3 12 V nC nC Unit
QG(th) Qg(7) Qg V(plateau)
-
VDD = 40 V, ID = 0.1 A, VGS = 1 V
Gate charge at Vgs=7V
VDD = 40 V, ID = 2.9 A, VGS = 0 to 7 V
Gate charge total
VDD = 40 V, ID = 2.9 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 2.9 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
0.95 45 0.08
2.9 11.6 1.2 56 0.12
A
TA = 25 C
Inverse diode direct current,pulsed
TA = 25 C
Inverse diode forward voltage V ns C
VGS = 0 V, I F = 5.8 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF=l S , diF/dt = 100 A/s
Data Sheet
4
05.99
BSP 320S
Power Dissipation
Drain current
Ptot = f (TA)
BSP320S
ID = f (TA )
BSP320S
1.9
W
3.2
A
1.6 1.4 2.4
Ptot
1.0 0.8
ID
C
1.2
2.0
1.6
1.2 0.6 0.8 0.4 0.2 0.0 0 0.4
20
40
60
80
100
120
160
0.0 0
20
40
60
80
100
120
C
160
Safe operating area
TA
Transient thermal impedance
TA
ID = f ( V DS )
parameter : D = 0 , TA = 25 C
10
A
2 BSP320S
ZthJA = f(tp )
parameter : D = tp /T
10 2
BSP320S
K/W
/ID
10 1
=
V
DS
tp = 130.0s
10 1
ID
1 ms
ZthJA
10 0
RD
S(
) on
10 0
10 ms
D = 0.50 0.20 0.10
10 -1
10 -1 single pulse
0.05 0.02 0.01
DC 10 -2 -1 10 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
4
10
0
10
1
V
10
2
s
10
VDS
tp
Data Sheet
5
05.99
BSP 320S
Typ. output characteristics
Drain-source on-resistance
ID = f (VDS)
parameter: tp = 80 s
lBSP320S
RDS(on) = f (Tj )
parameter : ID = 2.9 A, VGS = 10 V
BSP320S
7.0
A
Ptot = 2W
0.30
k h j g id 6.0 fe
5.5 5.0
c
VGS [V] a 4.0
0.24
c d e f g h i
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
RDS(on)
b
4.5
0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06
ID
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
a b
98% typ
j k l
0.04 0.02
V
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
0.00 -60
-20
20
60
100
C
180
VDS
Tj
Data Sheet
6
05.99
BSP 320S
Typ. transfer characteristics I D= f ( VGS ) parameter: tp = 80 s VDS 2 x ID x RDS(on)max
14
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS , ID = 20 A
5.2
V
A
4.4 4.0
VGS(th)
10
3.6 3.2 2.8
ID
8
6
2.4 2.0
max
4
1.6 1.2
typ
2
0.8 0.4
min
0 0
1
2
3
4
5
V
7
0.0 -60
-20
20
60
100
140
V
200
VGS
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f(VDS)
Parameter: VGS=0 V, f=1 MHz
10 3
IF = f (VSD )
parameter: Tj , tp = 80 s
10 2
BSP320S
A pF
Cis
10 1
C
10 2
Cos Crs
10 0
IF
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 1 0
5
10
15
20
25
V
35
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
Data Sheet
7
05.99
BSP 320S
Avalanche Energy EAS = f (Tj) parameter: ID = 2.9 A,VDD = 25 V
Typ. gate charge
VGS = f (QGate )
parameter: ID puls =2.9A
BSP320S
RGS = 25
65
mJ
16
V
55 50 45 12
VGS
EAS
40 35
10
8 30 25 20 15 10 5 0 20 40 60 80 100 120
C
0,2 VDS max
0,8 VDS max
6
4
2
160
0 0
2
4
6
8
10
12
Tj
nC 15 Q Gate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSP320S
72
V
68 66 64 62 60 58 56 54 -60
V(BR)DSS
-20
20
60
100
C
180
Tj
Data Sheet
8
05.99

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